Crystal Growth of Silicate Phosphors from the Vapor Phase

نویسندگان

  • Tadashi Ishigaki
  • Kenji Toda
  • Tatsuya Sakamoto
  • Kazuyoshi Uematsu
  • Mineo Sato
چکیده

Well-crystallized Ba2SiO4:Eu powders were grown on a substrate by the vapor phase reaction between a mixed powder (barium carbonate and europium oxide) and SiO gas. The vaporization of SiO occurs at 1400–1600◦C from the SiO2 source (or SiO powder) in a reducing atmosphere. The formed SiO gas was transported by 95 vol% Ar 5 vol% H2 gas and reacted with the raw material powders. The emission intensity of the Ba2SiO4:Eu phosphor synthesized by the new vapor phase technique is about 2.6 times higher than that of a conventional solid-state reaction sample. key words: phosphor, green emission, silicon monoxide, Ba2SiO4:Eu

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عنوان ژورنال:
  • IEICE Transactions

دوره 94-C  شماره 

صفحات  -

تاریخ انتشار 2011